DocumentCode :
1055281
Title :
Condition for no charge accumulation on a metal of a Schottky—Schottky connection in a system of Gunn devices
Author :
Hashizume, Nobuo ; Kodato, Setsuo
Author_Institution :
Electrotechnical Laboratory, Tanashi, Tokyo
Volume :
23
Issue :
12
fYear :
1976
fDate :
12/1/1976 12:00:00 AM
Firstpage :
1351
Lastpage :
1353
Abstract :
Possibility of the charge accumulation on a metal of a Schottky barrier, prepared for triggering a Gunn device, is pointed out and experimental evidences shown when a trigger input is fed through another series Schottky barrier of opposite polarity. A theory is developed which shows conditions for avoiding the phenomenon.
Keywords :
Cathodes; Circuits; Electrodes; Gunn devices; Laboratories; Schottky barriers; Schottky diodes; Semiconductor diodes; Space charge; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18665
Filename :
1478678
Link To Document :
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