DIBL considerations of extended drain structure for 0.1 /spl mu/m MOSFET´s

The drain-induced-barrier-lowering (DIBL) considerations of the extended drain structure were studied using two-dimensional (2-D) device simulations in the tenth-micrometer regime. We found that the drain extension length must be kept at a minimum in order to reduce the transistor cell area and to improve the device transconductance, G/sub m/. However, without decreasing the deep source/drain junction depth, the minimum value of which is basically limited by the ability to form a good low resistive silicide contact, charge sharing associated with a small extension length deteriorates the short channel behavior of the device, via DIBL, even if aggressive scaling of the gate oxide thickness and the junction depth of the drain extension were used. The solution to this dilemma would be elevating the source/drain area by selective epitaxy to form a shallow, low resistive silicided junction. We propose here a novel device structure using the elevated silicide-as-a-diffusion-source (E-SADS), which improves the DIBL-G/sub m/ tradeoff, eliminates the contact problem, and maintains a minimal cell areal increase.