Double-Layer antireflection coating design for semi-infinite one-dimensional photonic Crystals

Author

Park, Yeonsang ; Jeon, Heonsu

Author_Institution

Sch. of Phys. & the Nano-Syst. Inst., Seoul Nat. Univ., South Korea

Volume

22

Issue

8

fYear

2004

Firstpage

1987

Lastpage

1989

Abstract

A theoretical formalism is established for double-layer (DL) antireflection coating (ARC) on a one-dimensional (1-D) photonic crystal (PC). Conventional DL-ARC for a bulk is equally applicable for a 1-D PC when the bulk substrate index is replaced with the optical admittance, which can be obtained from the electromagnetic Bloch waves of the infinite 1-D PC. Numerical calculations are performed for a model structure composed of GaAs and AlAs-oxide layers to confirm the validity of the theory. In terms of realization and practicality, this DL-ARC is expected to be superior to the single-layer version.

Keywords

III-V semiconductors; aluminium compounds; antireflection coatings; gallium arsenide; optical constants; optical design techniques; optical multilayers; photonic crystals; GaAs-AlAs; double-layer antireflection coating design; electromagnetic Bloch waves; optical admittance; semiinfinite one-dimensional photonic crystals; Admittance; Coatings; Optical materials; Optical reflection; Optical refraction; Optical variables control; Personal communication networks; Photonic band gap; Photonic crystals; Refractive index; 1-D PCs; Bloch wave; DL-ARC; double-layer antireflection coating; one-dimensional photonic crystals; optical admittance;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2004.832436

Filename

1321198