A novel technology to reduce the antenna charging effects during polysilicon gate electron-cyclotron-resonance etching

Author

Cheng, Huang-Chung ; Kang, Tzong-Kuei ; Ku, Tzun-Kun ; Dai, Bau-Tong ; Chen, Liang-Po

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

17

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

338

Lastpage

340

Abstract

A novel technique, which uses Cl/sub 2//O/sub 2/ mixed gas in the electron cyclotron resonance (ECR) etching system, has been proposed to remove the antenna charging effect of the MOS capacitors with 5-nm-thick oxides during polysilicon gate etching. The Cl/sub 2//O/sub 2/ can cause the trenching effect and prevents the gate oxide from the charging damage. Furthermore, the ECR system can provide high polysilicon/oxide selectivity so that the Si substrate under gate oxide is not directly bombarded by the ions. Consequently, the E/sub bd/ degradation of the MOS capacitors disappears as the trenching effect is apparent by using moderate Cl/sub 2//O/sub 2/ mixed gas.

Keywords

MOS capacitors; antennas in plasma; cyclotron resonance; elemental semiconductors; semiconductor technology; silicon; sputter etching; Cl/sub 2/; Cl/sub 2//O/sub 2/ mixed gas; MOS capacitor; O/sub 2/; Si; Si substrate; antenna charging effect; breakdown field degradation; charging damage; electron-cyclotron-resonance plasma etching; gate oxide; polysilicon gate; selectivity; trenching effect; Aluminum; Dry etching; Electrons; MOS capacitors; Plasma applications; Plasma devices; Plasma sources; Polymers; Surface charging; Wet etching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.506360

Filename

506360