Title :
Electron traps on high-temperature oxidized SIMOX buried oxides
Author :
Lawrence, Reed K. ; Ioannou, Dimitris E.
Author_Institution :
ARACOR, Washington, DC, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
Photo-injection was used to study the charge trapping properties of high-temperature oxidation (HITOX) SIMOX buried oxides (BOX), provided by two independent vendors. After electron injection, from a 5 eV mercury light source, the electron trapping per area for both HITOX material sources was found to be larger than their respective standard (control) separation by implantation of oxygen (SIMOX) structures. This increase has been attributed to the HITOX´s process influence on the formation of the HITOX/BOX oxide.
Keywords :
SIMOX; buried layers; electron traps; oxidation; SIMOX buried oxides; Si; charge trapping properties; electron injection; electron trapping; high-temperature oxidation; photo-injection; Annealing; Atomic force microscopy; Electron traps; High speed integrated circuits; Light sources; Lighting control; Oxidation; Research and development; Semiconductor films; Silicon;
Journal_Title :
Electron Device Letters, IEEE
