Title :
Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O
Author :
Sun, S.C. ; Chen, T.F.
Author_Institution :
Nat. Nano Device Lab., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
7/1/1996 12:00:00 AM
Abstract :
This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta/sub 2/O/sub 5/, films by developing a new post-deposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N/sub 2/O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta/sub 2/O/sub 5/ film, thereby resulting in a remarkable reduction of the film´s leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O/sub 2/ annealing and furnace dry-O/sub 2/ annealing. The comparison reveals that RTN/sub 2/O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.
Keywords :
CVD coatings; DRAM chips; MOS capacitors; dielectric thin films; electric breakdown; integrated circuit reliability; integrated circuit technology; leakage currents; rapid thermal annealing; tantalum compounds; thermal stability; 3D stacked capacitors; LPCVD; N/sub 2/O; RTA; TDDB reliability; Ta/sub 2/O/sub 5/; chemical-vapor-deposited films; electrical characteristics; high-density DRAMs; leakage current reduction; low-pressure CVD; post-deposition single-step annealing technique; rapid thermal annealing; thermal stability; time-dependent dielectric breakdown; trench capacitors; Capacitance; Capacitors; Chemical vapor deposition; Electric variables; Electrodes; Furnaces; Leakage current; Material storage; Random access memory; Rapid thermal annealing;
Journal_Title :
Electron Device Letters, IEEE
