Title :
Integration of GalnP/GaAs heterojunction bipolar transistors and high electron mobility transistors
Author :
Yang, Y.F. ; Hsu, C.C. ; Yang, E.S.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
7/1/1996 12:00:00 AM
Abstract :
Integration of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) is demonstrated by growing an HBT on the top of a HEMT. A current gain of 60, a cutoff frequency of 59 GHz and a maximum oscillation frequency of 68 GHz were obtained for a 5×15 μm2 self-aligned HBT. The HEMT, with a gate length of 1.5 μm has a transconductance of 210 mS/mm, a cutoff frequency of 9 GHz and a maximum oscillation frequency of 22 GHz. It is shown that the GaInP/GaAs HBT on the HEMT is a simple Bi-FET technology suitable for microwave and mixed signal applications.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated circuit technology; mixed analogue-digital integrated circuits; monolithic integrated circuits; 1.5 micron; 210 mS/mm; 9 to 68 GHz; BiFET technology; GaInP-GaAs:C; HBT/HEMT integration; heterojunction bipolar transistors; high electron mobility transistors; microwave applications; mixed signal applications; self-aligned HBT; Cutoff frequency; Epitaxial layers; Etching; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; MOCVD; MODFETs; Microwave FETs; Substrates;
Journal_Title :
Electron Device Letters, IEEE
