DocumentCode
1055573
Title
Electrical characterization of vapor-phase epitaxially grown large-area n-AlAs—P-GaAs heterojunctions
Author
Johnston, W.D. ; Johnston, Wilbur D., Jr.
Author_Institution
Bell Laboratories, Holmdel, NJ
Volume
24
Issue
2
fYear
1977
fDate
2/1/1977 12:00:00 AM
Firstpage
135
Lastpage
140
Abstract
The heterojunction formed by n-AlAs grown by vapor-phase chloride transport on commercially obtained
Keywords
Conducting materials; Conductivity; Crystalline materials; Epitaxial growth; Gallium arsenide; Heterojunctions; Photovoltaic cells; Substrates; Voltage; Zinc;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18692
Filename
1478884
Link To Document