Title :
Electrical characterization of vapor-phase epitaxially grown large-area n-AlAs—P-GaAs heterojunctions
Author :
Johnston, W.D. ; Johnston, Wilbur D., Jr.
Author_Institution :
Bell Laboratories, Holmdel, NJ
fDate :
2/1/1977 12:00:00 AM
Abstract :
The heterojunction formed by n-AlAs grown by vapor-phase chloride transport on commercially obtained
Keywords :
Conducting materials; Conductivity; Crystalline materials; Epitaxial growth; Gallium arsenide; Heterojunctions; Photovoltaic cells; Substrates; Voltage; Zinc;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18692
