Title :
Kink effect in an InAs inserted-channel InAlAs/InGaAs inverted HEMT at low temperature
Author :
Akazaki, Tatsushi ; Takayanagi, Hideaki ; Enoki, Takatomo
Author_Institution :
NTT Basic Res. Labs., Kanagawa, Japan
fDate :
7/1/1996 12:00:00 AM
Abstract :
The authors have investigated the kink effect In an InAs-inserted-channel InAlAs/InGaAs inverted HEMT at low temperature. The kink effect was not observed at both 77 and 300 K, but it appeared at 4.2 K. It is shown that the kink effect is caused at low drain voltages by the suppression of the drain current due to an increase in the source access resistance and at higher drain voltages by the increase in the drain current due to holes generated by impact ionization.
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; 4.2 to 300 K; InAlAs-InGaAs; InAs; InAs inserted-channel; drain current suppression; impact ionization; inverted HEMT; kink effect; low drain voltages; low temperature; source access resistance; Current measurement; Density measurement; Electrons; FETs; HEMTs; Impact ionization; Indium gallium arsenide; Intrusion detection; Temperature; Voltage;
Journal_Title :
Electron Device Letters, IEEE
