Temperature dependence of the transient behavior of large-area Si-doped GaAs—GaAlAs SH light-emitting diodes

The temperature dependence of the light delay and rise time of Si-doped GaAs-GaAlAs SH junction LED´s has been measured in the range from 120 to 350 K. At low temperatures, larger delay times have been found foe small levels of injection current, leading to the assumption that the influences of the charging processes in the depletion layer on the total switching process is enhanced at these temperatures. This effect is evident also from the temperature dependence of the light rise time.