DocumentCode
1055732
Title
High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer
Author
Suk, Sung Dae ; Yeo, Kyoung Hwan ; Cho, Keun Hwi ; Li, Ming ; Yeoh, Yun Young ; Lee, Sung-Young ; Kim, Sung Min ; Yoon, Eun Jung ; Kim, Min Sang ; Oh, Chang Woo ; Kim, Sung Hwan ; Kim, Dong-Won ; Park, Donggun
Author_Institution
Samsung Electron. Co., Yongin
Volume
7
Issue
2
fYear
2008
fDate
3/1/2008 12:00:00 AM
Firstpage
181
Lastpage
184
Abstract
A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a nanowire diameter. It also shows good short-channel effects immunity down to 30-nm gate length due to the GAA structure and the nanowire channel. The effect of bottom parasitic transistor in TSNWFET is also investigated.
Keywords
MOSFET; elemental semiconductors; silicon; extremely high-drive currents; nanowire diameter; p-channel TSNWFETs; parasitic transistor; twin silicon nanowire MOSFET; 5 nm; 5nm; Bulk MOSFET; MOSFET; TSNWFET; Twin Silicon nanowire; bulk MOSFET; gate all around; gate all around (GAA); high performance; nanowire; twin silicon nanowire;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2008.917843
Filename
4445654
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