DocumentCode
1055853
Title
Design of transferred-electron amplifiers with good frequency stability
Author
Berry, Chris ; Hobson, G.S. ; Howard, M.J. ; Robson, Peter N.
Author_Institution
The University of Sheffield, Sheffield, England
Volume
24
Issue
3
fYear
1977
fDate
3/1/1977 12:00:00 AM
Firstpage
270
Lastpage
274
Abstract
An experimental and theoretical investigation has been conducted into the frequency stability, with respect to temperature, bias voltage, and microwave power variation, of transferred-electron amplifiers with various doping profiles. Devices with a cathode doping-notch which is large enough to cause a flat electric-field distribution at the working point show the best frequency stability. This behavior is associated with the predominance of a frequency-independent negative-conductor behavior in this type of device.
Keywords
Cathodes; Current-voltage characteristics; Doping profiles; Frequency; Impedance; Microwave amplifiers; Microwave devices; Stability; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18719
Filename
1478911
Link To Document