• DocumentCode
    1055898
  • Title

    Impurity effect on high-field transport properties of electrons in silicon

  • Author

    Zanfi, L. ; Losi, A. ; Jacoboni, C. ; Canali, C.

  • Author_Institution
    Istituto di Fisica, Modena, Italy
  • Volume
    24
  • Issue
    3
  • fYear
    1977
  • fDate
    3/1/1977 12:00:00 AM
  • Firstpage
    281
  • Lastpage
    283
  • Abstract
    Monte Carlo calculations have been performed on the effect of ionized impurities on high-field electron transport at 300 K in silicon. For concentrations higher that 10^{18} cm^{-3} the impurity effects on drift velocity and mean energy are still present at field strength as high as 105V . cm-1and a superohmic behavior of v_{d}(E) is found.
  • Keywords
    Acoustic scattering; Cathodes; Contracts; Current density; Diodes; Electron mobility; Impurities; Physics; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18724
  • Filename
    1478916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1055898