DocumentCode :
1055898
Title :
Impurity effect on high-field transport properties of electrons in silicon
Author :
Zanfi, L. ; Losi, A. ; Jacoboni, C. ; Canali, C.
Author_Institution :
Istituto di Fisica, Modena, Italy
Volume :
24
Issue :
3
fYear :
1977
fDate :
3/1/1977 12:00:00 AM
Firstpage :
281
Lastpage :
283
Abstract :
Monte Carlo calculations have been performed on the effect of ionized impurities on high-field electron transport at 300 K in silicon. For concentrations higher that 10^{18} cm^{-3} the impurity effects on drift velocity and mean energy are still present at field strength as high as 105V . cm-1and a superohmic behavior of 
is found.
is found.Keywords :
Acoustic scattering; Cathodes; Contracts; Current density; Diodes; Electron mobility; Impurities; Physics; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18724
Filename :
1478916
Link To Document :
