DocumentCode :
1055918
Title :
Determination of dopant profiles by voltage measurements
Author :
Lehovec, Kurt ; Chen, Chih-Hong
Author_Institution :
University of Southern California, Los Angeles, CA
Volume :
24
Issue :
3
fYear :
1977
fDate :
3/1/1977 12:00:00 AM
Firstpage :
284
Lastpage :
286
Abstract :
The dopant profile in the channel of a double-gated J-FET with uniformly doped channel and substrate is determined from measurements of gate voltage pairs at pinchoff. This procedure offers advantages over the 
method in cases of imprecisely known gate area, or in the presence of significant stray capacitance.
method in cases of imprecisely known gate area, or in the presence of significant stray capacitance.Keywords :
Capacitance; Capacitance-voltage characteristics; Equations; Impurities; Niobium; P-n junctions; Schottky diodes; Semiconductor diodes; Substrates; Voltage measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18726
Filename :
1478918
Link To Document :
