DocumentCode
1055937
Title
Onset of heavy inversion in MOS devices doped nonuniformly near the surface
Author
Feltl, Helmut
Author_Institution
Siemens AG, Munich, Germany
Volume
24
Issue
3
fYear
1977
fDate
3/1/1977 12:00:00 AM
Firstpage
288
Lastpage
289
Abstract
A general definition for the onset of heavy inversion at the semiconductor surface is derived, which includes the effect of nonuniform impurity concentration near the surface caused, for instance, by thermal oxidation.
Keywords
Charge coupled devices; Clocks; Electron devices; Filling; Frequency; MOS devices; Oxidation; Potential well; Pulse measurements; Semiconductor impurities;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18728
Filename
1478920
Link To Document