• DocumentCode
    1055945
  • Title

    The effect of collector location on βuof I2L structures

  • Author

    Rofail, Samir S. ; Elmasry, Mohamed I.

  • Author_Institution
    University of Waterloo, Ont., Canada
  • Volume
    24
  • Issue
    3
  • fYear
    1977
  • fDate
    3/1/1977 12:00:00 AM
  • Firstpage
    289
  • Lastpage
    291
  • Abstract
    I2L multicollector n-p-n transistor structures are used widely in LSI chips. Due to layout restrictions the collector could be at a distance from the injector. In this case, βuper collector is affected by the lateral voltage drop in the base. This effect becomes significant at higher current levels. In this work the lateral base region of the n-p-n transistor is modeled and a scheme is given to obtain the variation of βuwith the base current. The results are compared to measurements obtained using a three-collector structure.
  • Keywords
    Electric resistance; Equations; Error correction; Flip-flops; Large scale integration; Logic devices; Logic functions; Region 1; Region 2; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18729
  • Filename
    1478921
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1055945