DocumentCode :
1056112
Title :
Efficiency calculations for thin-film polycrystalline semiconductor Schottky barrier solar cells
Author :
Lanza, C. ; Hovel, H.J.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume :
24
Issue :
4
fYear :
1977
fDate :
4/1/1977 12:00:00 AM
Firstpage :
392
Lastpage :
396
Abstract :
Numerical calculations have been made of the effect of grain size on the short-circuit current and the AM1 efficiency of polycrystalline thin film InP, GaAs, and Si Schottky barrier solar cells. Si cells 10 µm thick are at best 8 percent efficient for 100-µm grain sizes; 25-µm-thick Si cells can be about 10 percent efficient for this grain size. GaAs cells 2 µm thick can be 12 percent efficient for grain sizes of 3 µm or greater.
Keywords :
Gallium arsenide; Grain boundaries; Grain size; Indium phosphide; Organic materials; Photovoltaic cells; Schottky barriers; Semiconductor materials; Semiconductor thin films; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18746
Filename :
1478938
Link To Document :
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