DocumentCode
1056139
Title
Detection of recombination centers in solar cells from junction capacitance transients
Author
Sah, Chih-Tang
Author_Institution
University of Illinois, Urbana, IL
Volume
24
Issue
4
fYear
1977
fDate
4/1/1977 12:00:00 AM
Firstpage
410
Lastpage
419
Abstract
The relations between the parameters which characterize electron-hole generation-recombination-trapping (GRT) centers and the electrical characteristics and efficiency of solar cells are discussed. The physics and the procedures of using the transient capacitance techniques to measure these GRT parameters in p-n junction, Schottky and MOS solar cells are presented with many experimental examples.
Keywords
Capacitance; Character generation; Charge carrier processes; Electron emission; Energy capture; P-n junctions; Photovoltaic cells; Radiative recombination; Solar power generation; Spontaneous emission;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18749
Filename
1478941
Link To Document