Title :
Detection of recombination centers in solar cells from junction capacitance transients
Author_Institution :
University of Illinois, Urbana, IL
fDate :
4/1/1977 12:00:00 AM
Abstract :
The relations between the parameters which characterize electron-hole generation-recombination-trapping (GRT) centers and the electrical characteristics and efficiency of solar cells are discussed. The physics and the procedures of using the transient capacitance techniques to measure these GRT parameters in p-n junction, Schottky and MOS solar cells are presented with many experimental examples.
Keywords :
Capacitance; Character generation; Charge carrier processes; Electron emission; Energy capture; P-n junctions; Photovoltaic cells; Radiative recombination; Solar power generation; Spontaneous emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18749
