• DocumentCode
    105629
  • Title

    Breaking down resistance

  • Author

    Davies, D.

  • Author_Institution
    IET, Stevenage, UK
  • Volume
    49
  • Issue
    6
  • fYear
    2013
  • fDate
    March 14 2013
  • Firstpage
    378
  • Lastpage
    378
  • Abstract
    A method to reduce specific on-resistance in AlGaN/GaN HEMTs has been developed in Korea. Requiring no special growth techniques, the devices produced also have excellent breakdown voltage, on/off current ratio and figure-of-merit.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; breakdown voltage; figure-of-merit value; on-off current ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2013.0697
  • Filename
    6485045
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=105629