A method to reduce specific on-resistance in AlGaN/GaN HEMTs has been developed in Korea. Requiring no special growth techniques, the devices produced also have excellent breakdown voltage, on/off current ratio and figure-of-merit.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; HEMT; breakdown voltage; figure-of-merit value; on-off current ratio;
