Title :
InP—CdS solar cells
Author :
Shay, Joseph L. ; Wagner, Sigurd ; Bettini, Manfred ; Bachmann, Klaus J. ; Buehler, Ernest
Author_Institution :
Bell Telephone Laboratories, Holmdel, NJ
fDate :
4/1/1977 12:00:00 AM
Abstract :
We report single crystal InP-CdS solar cells having AM2 efficiencies of 15 percent and polycrystalline thin-film cells having AM2 efficiencies of 5.7 percent. Basic studies of the interface reveal that the thin-film efficiency is presently limited at least in part by the quality of the InP within the grains, and not exclusively by interface phenomena intrinsic to a polycrystalline cell. Preliminary accelerated life tests indicate a remarkable insensitivity of these unencapsulated cells to the ambient.
Keywords :
Chemical vapor deposition; Heterojunctions; Indium phosphide; Interface phenomena; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18763
