Title :
MNOS LSI memory device data retention measurements and projections
Author_Institution :
McDonnell Douglas Corporation, Monrovia, CA
fDate :
5/1/1977 12:00:00 AM
Abstract :
The retention characteristics of an MNOS LSI memory device are interpreted from the properties of its basic MNOS transistor. A technique is developed for measuring and predicting retention properties of large quantity device lots. A production lot test method for determining the 10 000-h data retention properties of LSI memory devices is proposed. Also included in the paper are measured failure rates, identifying the retention failures and reliability for a specific LSI memory device.
Keywords :
Large scale integration; Manufacturing; Nonvolatile memory; Packaging; Pins; Production; Random access memory; Read-write memory; Testing; Writing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18780
