Endurance of thin-oxide nonvolatile MNOS memory transistors

A discussion of the factors which determine the endurance of thin-oxide MNOS memory transistors is presented. Si-SiO2interface states are influential in the early stages of erase/write cycling, while charge movement into the nitride controls the long term cycling characteristics. Other important variables include the method of preparation of the thin-oxide region, its composition, dielectric properties and thickness; the high density of spatially localized traps near the nitride-oxide interface; the low conductivity Si3N4dielectric, and electric field strengths. Optimizing these variables permits MNOS memory transistors to be operated with high endurance, reliably to beyond 10¹⁰erase/write cycles with ±20-V, 100-µs pulses and demonstrate a minimum 2-V memory window at 2900 h retention time.