• DocumentCode
    1056493
  • Title

    Threshold-alterable Si-gate MOS devices

  • Author

    Chen, Peter C Y

  • Author_Institution
    Fairchild Camera and Instrument Corporation, Palo Alto, CA
  • Volume
    24
  • Issue
    5
  • fYear
    1977
  • fDate
    5/1/1977 12:00:00 AM
  • Firstpage
    584
  • Lastpage
    586
  • Abstract
    An electrically threshold-alterable n-channel MOS device with polysilicon gate is experimentally realized by employing a polysilicon-oxynitride-nitride-oxide-silicon (SONOS) structure. Because of several high-temperature processing steps after the nitride deposition, it was found necessary to increase the thin-oxide thickness of the SONOS devices in order to achieve better charge retentivity. It has been shown that the SONOS device can be used in MOS integrated circuits. Some memory and switching characteristics of the SONOS devices with oxide thickness of ∼30 Å are presented.
  • Keywords
    Capacitance-voltage characteristics; Dielectric films; Dielectric substrates; Dielectric thin films; Digital signal processing; MOS capacitors; MOS devices; Oxidation; SONOS devices; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18783
  • Filename
    1478975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056493