DocumentCode :
1056509
Title :
The GaAs P-N-P-N laser diode
Author :
Lockwood, H.F. ; Etzold, K.-F. ; Stockton, T.E. ; Marinelli, D.P.
Author_Institution :
RCA Laboratories, Princeton, N.J, Usa
Volume :
10
Issue :
7
fYear :
1974
fDate :
7/1/1974 12:00:00 AM
Firstpage :
567
Lastpage :
569
Abstract :
The general structure of double-heterojunction diode lasers is shown to be consistent with the required geometry of the Shockley diode or p-n-p-n switch. When the two devices are combined in a single structure, there results an extremely simple source of high optical power (>0.5-W) pulses of very short duration (<10 ns) without the need for a complex external driver. In principle, pulse triggering and repetition rate are easily controlled, suggesting that the device has potential application in pulse-coded optical communication systems.
Keywords :
Communication system control; Control systems; Diode lasers; Gallium arsenide; Geometrical optics; Optical control; Optical devices; Optical pulses; Optical switches; Ultraviolet sources;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1974.1068200
Filename :
1068200
Link To Document :
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