Title :
MNOS density parameters
Author_Institution :
Westinghouse Electric Corporation, Baltimore, MD
fDate :
5/1/1977 12:00:00 AM
Abstract :
Some aspects of the feasibility of the MNOS technology for the realization of large read/write memory systems are examined. Contemporary and near term density parameters for volume, weight, and power are presented. Achievable memory cells and die sizes are examined. The impact of nonvolatility on system reliability is explained. Packaging density forchip assemblies and memory systems is reviewed. Finally, the parameters and reliability of a 109bit MNOS memory are described.
Keywords :
Circuits; Electronics packaging; FETs; Helium; Large scale integration; Manufacturing; Satellites; Silicon; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18791
