• DocumentCode
    1056647
  • Title

    Design considerations of high-efficiency double-drift silicon IMPATT diodes

  • Author

    Chang, Lang-Chee ; Hu, Ding-Huah ; Wang, Chao-Chen

  • Author_Institution
    Ministry of Communications, Taiwan, Republic of China
  • Volume
    24
  • Issue
    6
  • fYear
    1977
  • fDate
    6/1/1977 12:00:00 AM
  • Firstpage
    655
  • Lastpage
    657
  • Abstract
    High-efficiency silicon double-drift IMPATT diodes with a low-high-low doping profile structure are proposed. Devices with efficiencies of 25 percent for 12 GHz, 24 percent for 18 GHz, and 19 percent for 50 GHz, are Predicted by numerical calculations.
  • Keywords
    Chaos; Charge carrier processes; Diodes; Doping profiles; Frequency; Laboratories; Noise measurement; Power generation; Scattering; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18798
  • Filename
    1478990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056647