Title :
Design considerations of high-efficiency double-drift silicon IMPATT diodes
Author :
Chang, Lang-Chee ; Hu, Ding-Huah ; Wang, Chao-Chen
Author_Institution :
Ministry of Communications, Taiwan, Republic of China
fDate :
6/1/1977 12:00:00 AM
Abstract :
High-efficiency silicon double-drift IMPATT diodes with a low-high-low doping profile structure are proposed. Devices with efficiencies of 25 percent for 12 GHz, 24 percent for 18 GHz, and 19 percent for 50 GHz, are Predicted by numerical calculations.
Keywords :
Chaos; Charge carrier processes; Diodes; Doping profiles; Frequency; Laboratories; Noise measurement; Power generation; Scattering; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18798
