DocumentCode :
1056692
Title :
Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers
Author :
Baliga, B.Jayant ; Sun, Edmund
Author_Institution :
General Electric Company, Schenectady, NY
Volume :
24
Issue :
6
fYear :
1977
fDate :
6/1/1977 12:00:00 AM
Firstpage :
685
Lastpage :
688
Abstract :
Recombination statistics based upon a single dominant level have been used to predict the relative characteristics of gold-diffused, platinum-diffused, and electron-irradiated silicon power rectifiers and thyristors. These calculations indicate that gold-diffused devices will have the best trade-off curve between forward voltage drop and reverse recovery time, while exhibiting the highest leakage currents. Electron-irradiated devices are predicted to have the worst trade-off curve among the three cases and twice the leakage current of platinum-diffused devices. The leakage current of platinum-diffused devices is shown to be an order of magnitude lower than gold-diffused devices. The measured characteristics of gold-diffused, platinum-diffused, and electron-irradiated power rectifiers are shown to be in good agreement with these calculations. The results are also shown to be applicable to power thyristors.
Keywords :
Electrons; Gold; Leakage current; Platinum; Rectifiers; Silicon; Spontaneous emission; Statistics; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18803
Filename :
1478995
Link To Document :
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