Title :
Transistors with boron bases predeposited by ion implantation and annealed in various oxygen ambients
Author :
Seidel, Thomas E. ; Payne, Richard S. ; Moline, R.A. ; Costello, William R. ; Tsai, Joseph C C ; Gardner, Karl R. ; Costello, W.R. ; Tsai, J.C.C. ; Gardner, K.R.
Author_Institution :
Bell Laboratories, Murray Hill, NJ
fDate :
6/1/1977 12:00:00 AM
Abstract :
Ion implanted bases result in better uniformity and wafer to wafer reproducibility for base resistors and transistor gain compared to diffused bases. However, when implanted boron is used as a replacement for a chemically predeposited base on
Keywords :
Annealing; Boron; Chemicals; Circuit faults; Degradation; Etching; Ion implantation; Oxidation; Silicon; Stacking;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18810
