• DocumentCode
    1056777
  • Title

    Transistors with boron bases predeposited by ion implantation and annealed in various oxygen ambients

  • Author

    Seidel, Thomas E. ; Payne, Richard S. ; Moline, R.A. ; Costello, William R. ; Tsai, Joseph C C ; Gardner, Karl R. ; Costello, W.R. ; Tsai, J.C.C. ; Gardner, K.R.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    24
  • Issue
    6
  • fYear
    1977
  • fDate
    6/1/1977 12:00:00 AM
  • Firstpage
    717
  • Lastpage
    723
  • Abstract
    Ion implanted bases result in better uniformity and wafer to wafer reproducibility for base resistors and transistor gain compared to diffused bases. However, when implanted boron is used as a replacement for a chemically predeposited base on
  • Keywords
    Annealing; Boron; Chemicals; Circuit faults; Degradation; Etching; Ion implantation; Oxidation; Silicon; Stacking;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18810
  • Filename
    1479002
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056777