Title :
Transient response of ohmic contacts operated in the two-carrier regime
Author :
Caruso, C. ; Spirito, P. ; Vitale, F.G.
Author_Institution :
Istituto Elettrotecnico, Naples, Italy
fDate :
6/1/1977 12:00:00 AM
Abstract :
The transient response of ohmic contacts with different absorbing properties for minority carriers is studied in bulk structures subjected to avalanche injection. A first-order model for the dynamics of the avalanche injection is developed and compared with experimental results, showing a relatively long transient for the standard contacts.
Keywords :
Cathodes; Doping; Ohmic contacts; Semiconductor diodes; Silicon alloys; Standards development; Switches; Transient response; Vacuum technology; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18822
