• DocumentCode
    1056899
  • Title

    A VMOS-bipolar compatible technology for high-performance analog integrated circuits

  • Author

    Holmes, F.E.

  • Author_Institution
    University of Toronto, Toronto, Canada
  • Volume
    24
  • Issue
    6
  • fYear
    1977
  • fDate
    6/1/1977 12:00:00 AM
  • Firstpage
    771
  • Lastpage
    773
  • Abstract
    A new integrated circuit process is presented which permits the simultaneous fabrication of n-p-n bipolar transitors and p-channel silicon-gate VMOS transistors. The technology involves no extra processing steps compared to the bipolar process. Test results are presented for the resulting VMOS devices.
  • Keywords
    Analog integrated circuits; Bipolar transistor circuits; Delay; Doping; Electrons; Integrated circuit technology; MOSFETs; Ohmic contacts; Substrates; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18823
  • Filename
    1479015
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056899