Title :
A VMOS-bipolar compatible technology for high-performance analog integrated circuits
Author_Institution :
University of Toronto, Toronto, Canada
fDate :
6/1/1977 12:00:00 AM
Abstract :
A new integrated circuit process is presented which permits the simultaneous fabrication of n-p-n bipolar transitors and p-channel silicon-gate VMOS transistors. The technology involves no extra processing steps compared to the bipolar process. Test results are presented for the resulting VMOS devices.
Keywords :
Analog integrated circuits; Bipolar transistor circuits; Delay; Doping; Electrons; Integrated circuit technology; MOSFETs; Ohmic contacts; Substrates; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18823
