• DocumentCode
    1056976
  • Title

    Total Dose Radiation Response of NROM-Style SOI Non-Volatile Memory Elements

  • Author

    Draper, Bruce ; Dockerty, Robert ; Shaneyfelt, Marty ; Habermehl, Scott ; Murray, James

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM
  • Volume
    55
  • Issue
    6
  • fYear
    2008
  • Firstpage
    3202
  • Lastpage
    3205
  • Abstract
    For the first time, NROM-style nonvolatile memory elements were fabricated in SOI and irradiated. Total dose characterizations of these transistors indicate that this new style of memory can be functional to at least 500 krad (SiO2).
  • Keywords
    random-access storage; read-only storage; silicon compounds; silicon-on-insulator; NROM-style SOI; SiO2; nonvolatile memory elements; total dose radiation response; Dielectric devices; Dielectric substrates; Electrons; Nonvolatile memory; Radiation effects; Radiation hardening; Read-write memory; SONOS devices; Tunneling; Voltage; CMOS memory integrated circuits; radiation effects; radiation hardening; semiconductor radiation effects;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2007566
  • Filename
    4736488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1056976