DocumentCode
1057012
Title
An SOI structure for flash A/D converter
Author
Kumamoto, Toshio ; Nakaya, Masao ; Kusunoki, Shigeru ; Nishimura, Tadashi ; Yazawa, Nobuharu ; Akasaka, Yoichi ; Horiba, Yasutaka
Author_Institution
Mitsubishi Electr. Corp., Hyogo, Japan
Volume
23
Issue
1
fYear
1988
Firstpage
198
Lastpage
201
Abstract
A 4-bit flash A/D converter has been fabricated using a silicon-on-insulator (SOI)/CMOS process technology. A transistor structure is introduced to suppress the floating-body effect in SOI n-channel transistor. The maximum conversion rate is 30 Msample/s. The power consumption is 18 mW (V/sub dd/=5 V) at 1 Msample/s. The SOI A/D converter is useful for the realization of image signal processing systems by using a stacked three-dimensional structure.<>
Keywords
CMOS integrated circuits; analogue-digital conversion; 18 mW; CMOS process technology; SOI n-channel transistor; flash A/D converter; floating-body effect; image signal processing systems; maximum conversion rate; stacked three-dimensional structure; Bandwidth; Broadband amplifiers; CMOS analog integrated circuits; Differential amplifiers; Frequency; Image converters; Linearity; Silicon on insulator technology; Solid state circuits; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.278
Filename
278
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