Title :
An integrated SIS mixer and HEMT IF amplifier
Author :
Padin, S. ; Woody, D.P. ; Stern, J.A. ; LeDuc, H.G. ; Blundell, R. ; Tong, C.-Y.E. ; Pospieszalski, M.W.
Author_Institution :
Owens Valley Radio Obs., California Inst. of Technol., Pasadena, CA, USA
fDate :
6/1/1996 12:00:00 AM
Abstract :
Design details are given for a 205-270 GHz fixed-tuned SIS receiver in which the SIS mixer and HEMT IF amplifier are integrated into a single compact unit. The mixer and IF amplifier are connected with an inductor which provides the reactive part of the optimum input impedance for the HEMT. This simple coupling circuit gives an IF bandwidth of ~4 GHz. The receiver has a DSB noise temperature in the range 35-80 K over the 205-270 GHz local oscillator band and 0.5-4.5 GHz IF band
Keywords :
HEMT circuits; impedance matching; intermediate-frequency amplifiers; millimetre wave integrated circuits; millimetre wave mixers; millimetre wave receivers; superconducting microwave devices; superconductor-insulator-superconductor mixers; 0.5 to 4.5 GHz; 205 to 270 GHz; 4 GHz; EHF; HEMT IF amplifier; MM-wave IC; SIS mixer; coupling circuit; fixed-tuned SIS receiver; inductor; integrated mixer/amplifier; optimum input impedance; Bandwidth; Capacitance; Capacitors; Circuits; HEMTs; Impedance; Inductors; Shunt (electrical); Slabs; Spirals;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
