DocumentCode :
105728
Title :
Baseband Equivalent Volterra Series for Digital Predistortion of Dual-Band Power Amplifiers
Author :
Fehri, Bilel ; Boumaiza, Slim
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Volume :
62
Issue :
3
fYear :
2014
fDate :
Mar-14
Firstpage :
700
Lastpage :
714
Abstract :
This paper proposes a new dual-band baseband equivalent (BBE) Volterra model devised to predict the behavior of dual-band power amplifiers (PAs) and/or to linearize their response. A series of derivations were applied to the original continuous passband Volterra-series expression to uncover a simple formulation that related the BBE envelopes of the output signals in each band to those at the input in the discrete domain. This yielded an inherently low-complexity dual-band Volterra-series model that does not require the empirical pruning commonly applied to the low-pass equivalent Volterra series. The proposed model was successfully applied to digitally predistort and linearize a dual-band 45-W class-AB GaN PA driven with different dual-band dual-standard test signals. For each band, the model necessitated less than 25 coefficients to reduce the adjacent channel leakage power ratio ACLR by up to 25 dB.
Keywords :
III-V semiconductors; Volterra series; gallium compounds; linearisation techniques; power amplifiers; wide band gap semiconductors; GaN; baseband equivalent Volterra series; class AB power amplifier; digital predistortion; discrete domain; dual band power amplifiers; linearize amplifier; low complexity dual band Volterra series model; low pass equivalent Volterra series; power 45 W; Baseband; Complexity theory; Computational modeling; Dual band; Numerical models; Passband; Predistortion; Digital predistortion (DPD); Volterra series; dual-band behavioral model;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2014.2303944
Filename :
6742635
Link To Document :
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