Noise determination in silicon micro strips

Author

Dubbs, T. ; Kashigin, S. ; Kratzer, M. ; Kroeger, W. ; Pulliam, T. ; Sadrozinski, H.F.-W. ; Spencer, E. ; Wichmann, R. ; Wilder, M. ; Bialas, W. ; Dabrowski, W. ; Unno, Y. ; Ohsugi, T.

Author_Institution

SCIPP, California Univ., Santa Cruz, CA, USA

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1119

Lastpage

1122

Abstract

We report the study of amplifier noise on silicon micro strip detectors. We have used a fast, low noise amplifier-comparator VLSI chip with 22 ns shaping time developed for the LHC to determine the noise at the pre-amp as a function of strip length and strip geometry, i.e., interstrip capacitance and ohmic strip resistance. In addition, we have tested the noise in irradiated detectors. We have compared the results with simulations using SPICE

Keywords

analogue processing circuits; application specific integrated circuits; bipolar analogue integrated circuits; electric noise measurement; integrated circuit noise; semiconductor device noise; silicon radiation detectors; 22 ns; SPICE; Si; Si microstrip detectors; VLSI chip; amplifier noise; bipolar amplifier-comparator ASIC; interstrip capacitance; ohmic strip resistance; shaping time; strip geometry; strip length; Capacitance; Detectors; Geometry; Large Hadron Collider; Low-noise amplifiers; Noise shaping; Silicon; Strips; Testing; Very large scale integration;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.506648

Filename

506648