Title :
Gallium arsenide microstrip detector and pixel detector developments
Author :
Bates, R. ; D´Auria, S. ; Da Via, C. ; Gowdy, S. ; O´Shea, V. ; Raine, C. ; Smith, K.M. ; Beaumont, S.P.
Author_Institution :
Dept. of Phys. & Astron., Glasgow Univ., UK
fDate :
6/1/1996 12:00:00 AM
Abstract :
Recent developments in improved charge collection efficiency of GaAs pad detectors are described together with their radiation hardness to irradiation by neutron, proton and pions. While the resistance to neutron irradiation is satisfactory more susceptibility is found to charge particle irradiation. Test beam results from microstrip detectors tested in a 70 GeV pion beam at CERN are also presented. Progress with GaAs pixel detectors is also reported.
Keywords :
II-VI semiconductors; gallium arsenide; meson effects; neutron effects; position sensitive particle detectors; proton effects; semiconductor counters; GaAs; GaAs pad detectors; GaAs pixel detectors; charge particle irradiation; gallium arsenide microstrip detector; microstrip detectors; neutron irradiation; pion beam; pixel detector developments; proton; radiation hardness; Detectors; Gallium arsenide; Large Hadron Collider; Mesons; Microstrip; Neutrons; Protons; Schottky diodes; Silicon; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
