DocumentCode
1057376
Title
Gallium arsenide microstrip detector and pixel detector developments
Author
Bates, R. ; D´Auria, S. ; Da Via, C. ; Gowdy, S. ; O´Shea, V. ; Raine, C. ; Smith, K.M. ; Beaumont, S.P.
Author_Institution
Dept. of Phys. & Astron., Glasgow Univ., UK
Volume
43
Issue
3
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
1137
Lastpage
1141
Abstract
Recent developments in improved charge collection efficiency of GaAs pad detectors are described together with their radiation hardness to irradiation by neutron, proton and pions. While the resistance to neutron irradiation is satisfactory more susceptibility is found to charge particle irradiation. Test beam results from microstrip detectors tested in a 70 GeV pion beam at CERN are also presented. Progress with GaAs pixel detectors is also reported.
Keywords
II-VI semiconductors; gallium arsenide; meson effects; neutron effects; position sensitive particle detectors; proton effects; semiconductor counters; GaAs; GaAs pad detectors; GaAs pixel detectors; charge particle irradiation; gallium arsenide microstrip detector; microstrip detectors; neutron irradiation; pion beam; pixel detector developments; proton; radiation hardness; Detectors; Gallium arsenide; Large Hadron Collider; Mesons; Microstrip; Neutrons; Protons; Schottky diodes; Silicon; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.506651
Filename
506651
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