Efficiency of non-uniformly irradiated double-sided silicon strip detectors

Author

Dubbs, T. ; Kashigin, S. ; Kratzer, M. ; Kroeger, W. ; Pulliam, T. ; Sadrozinski, H.F.-W. ; Schwab, M. ; Spencer, E. ; Wichmann, R. ; Wilder, M. ; Unno, Y. ; Ohsugi, T.

Author_Institution

SCIPP, California Univ., Santa Cruz, CA, USA

Volume

43

Issue

3

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

1142

Lastpage

1145

Abstract

We have investigated the efficiency and the noise occupancy of a double-sided silicon strip detector, which was subjected to non-uniform proton irradiations up to a maximum equivalent fluence of 5·10 ¹³p·cm^-2. The depletion voltage, varying over time due to controlled annealing, was close to zero on one end of the 6 cm strips and 190 V at the high radiation end. We have determined the efficiency and noise occupancy on both n-side and p-side in a ¹⁰⁶RU telescope, using a binary read-out system with 22 ns shaping time. The n-side exhibits superior performance after type inversion

Keywords

proton detection; silicon radiation detectors; 190 V; Si; binary read-out system; controlled annealing; depletion voltage; noise occupancy; nonuniform proton irradiations; nonuniformly irradiated double-sided Si strip detectors; Annealing; Capacitance; Large Hadron Collider; Noise shaping; Protons; Pulse amplifiers; Radiation detectors; Silicon; Strips; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.506652

Filename

506652