• DocumentCode
    1057398
  • Title

    Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric

  • Author

    Chang, M.F. ; Lee, P.T. ; McAlister, S.P. ; Chin, Albert

  • Author_Institution
    Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
  • Volume
    30
  • Issue
    2
  • fYear
    2009
  • Firstpage
    133
  • Lastpage
    135
  • Abstract
    Pentacene organic thin-film transistors (OTFTs) with a high-kappa HfLaO dielectric were integrated onto flexible polyimide substrates. The pentacene OTFTs exhibited good performance, such as a low subthreshold swing of 0.13 V/decade and a threshold voltage of -1.25 V. The field-effect mobility was 0.13 cm2/Vmiddots at an operating voltage as low as only 2.5 V. These characteristics are attractive for high-switching-speed and low-power applications.
  • Keywords
    hafnium compounds; high-k dielectric thin films; organic field effect transistors; thin film transistors; HfLaO; field-effect mobility; flexible polyimide substrates; gate dielectric; high-kappa dielectric; high-switching-speed application; low-power application; low-voltage flexible pentacene organic thin-film transistor; small-subthreshold-swing transistor; threshold voltage; voltage 2.5 V; Flexible; HfLaO; high-$ kappa$; organic thin-film transistors (OTFTs); pentacene;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2010416
  • Filename
    4738336
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057398