DocumentCode :
105744
Title :
A Novel Trench-Gated Power MOSFET With Reduced Gate Charge
Author :
Ying Wang ; Yan-Juan Liu ; Cheng-Hao Yu ; Fei Cao
Author_Institution :
Coll. of Inf. & Commun. Eng., Harbin Eng. Univ., Harbin, China
Volume :
36
Issue :
2
fYear :
2015
fDate :
Feb. 2015
Firstpage :
165
Lastpage :
167
Abstract :
In this letter, we propose a novel trench power MOSFET structure with a p-n junction in trench to reduce the gate charge. We utilize the 2-D device simulator, ATLAS, to investigate the characteristics of the proposed structure and compare with the conventional structure. As a result, the proposed structure exhibits 49.5% enhancement in gate-charge Qg as compared with the conventional structure, without degrading the other electrical characteristics.
Keywords :
p-n junctions; power MOSFET; semiconductor device models; 2D device simulator; ATLAS; gate charge; novel trench power MOSFET structure; p-n junction; Doping; Junctions; Logic gates; MOSFET; Performance evaluation; Switches; Threshold voltage; Trench MOSFET; gate-charge; switching speed; trench MOSFET;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2382112
Filename :
6994833
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=105744
بازگشت