Finite-element methods in semiconductor device simulation

Application of the finite-element method for continuous time-dependent media to two-dimensional semiconductor device simulation is described. It is shown that this method guarantees exact conservation of current both locally and at the device terminals. Finite-element forms of Poisson´s equation and the electron and hole current continuity equations are derived. Implementation of second order (linear triangular elements) and fourth order (Hermite bicubic elements) methods is discussed.