Title :
Low-temperature (⩽600°C) polysilicon thin-film transistors
Author :
Stroh, R.J. ; Plais, F. ; Kretz, T. ; Legagneux, P. ; Huet, O. ; Magis, M. ; Pribat, D. ; Jiang, N. ; Hugon, M.C. ; Agius, B.
Author_Institution :
Thomson-CSF, Orsay, France
fDate :
2/1/1994 12:00:00 AM
Abstract :
Polycrystalline silicon is a promising candidate for the fabrication of thin-film transistors used to control the pixel voltage of active-matrix liquid-crystal displays. Results are presented on the ultra-high vacuum chemical vapour deposition of silicon thin films and on the gate-oxide deposition at low temperature by distributed electron-cyclotron-resonance-plasma-enhanced chemical vapour deposition. It is shown that high electron mobilities and low off currents characterise the transistors fabricated with these techniques
Keywords :
chemical vapour deposition; elemental semiconductors; insulated gate field effect transistors; plasma CVD; semiconductor growth; silicon; thin film transistors; 600 C; Si; Si thin films; active-matrix LCD; chemical vapour deposition; distributed ECR CVD; electron-cyclotron-resonance; fabrication; gate-oxide deposition; high electron mobilities; liquid-crystal displays; low offcurrents; low temperature process; plasma-enhanced CVD; polycrystalline Si; polysilicon TFT; thin-film transistors; ultra-high vacuum deposition;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19949949
