DocumentCode :
1057510
Title :
Nonvolatile static read/write memory cell using CMNOS structure
Author :
Koike, Susumu
Author_Institution :
Matsushita Electronics Corporation, Takatsuki, Osaka, Japan
Volume :
24
Issue :
8
fYear :
1977
fDate :
8/1/1977 12:00:00 AM
Firstpage :
1098
Lastpage :
1102
Abstract :
A new type of nonvolatile static read/write memory cell constructed with three MOS transistors and one MNOS transistor is proposed. The MNOS transistor and one of the MOS transistors involved are complementary combined to offer binary states in the Λ-shaped 
curve for memory operation under normal power supply. Upon power failure, the MNOS transistor acts as a back-up element for nonvolatility. The new cell is characterized by advantageous features such as small cell size, simple peripheral circuit, operation with a unipolar power supply and low standby power consumption.
curve for memory operation under normal power supply. Upon power failure, the MNOS transistor acts as a back-up element for nonvolatility. The new cell is characterized by advantageous features such as small cell size, simple peripheral circuit, operation with a unipolar power supply and low standby power consumption.Keywords :
Circuits; Electrodes; Emergency power supplies; Energy consumption; MOSFETs; Nonvolatile memory; PROM; Power supplies; Read-write memory; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18883
Filename :
1479075
Link To Document :
