Title :
Continuous-wave operation of electrically pumped GaSb-based vertical cavity surface emitting laser at 2.3 mm
Author :
Bachmann, A. ; Lim, T. ; Kashani-Shirazi, K. ; Dier, O. ; Lauer, C. ; Amann, M.-C.
Author_Institution :
Tech. Univ. Munchen, Garching
Abstract :
A novel concept for electrically pumped GaSb-based vertical cavity surface emitting lasers including a structured buried tunnel junction as current aperture is presented. Continuous-wave room temperature operation at 2.325 mum has been achieved. Devices with an aperture diameter of 9 mum show threshold currents of 3.3 mA, threshold voltages of 0.87 V and an output power of 87 muW.
Keywords :
III-V semiconductors; gallium compounds; semiconductor lasers; surface emitting lasers; GaSb; continuous wave operation; current 3.3 mA; current aperture; electrically pumped vertical cavity surface emitting laser; power 87 muW; room temperature; size 9 mum; structured buried tunnel junction; temperature 293 K to 298 K; voltage 0.87 V; wavelength 2.3 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20083430
