Title :
Design and operation of poly-Si analogue circuits
Author :
Reita, C. ; Fluxman, S.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
2/1/1994 12:00:00 AM
Abstract :
The paper illustrates the use of poly-Si thin film transistors (TFTs) to fabricate analogue circuits and in particular operational amplifiers (opamps). A brief description of the peculiarities of poly-Si technology and their effects on the design of analogue circuits is given and some results obtained with low-temperature processes on two designs are discussed
Keywords :
CMOS integrated circuits; MOS integrated circuits; elemental semiconductors; linear integrated circuits; operational amplifiers; silicon; thin film transistors; Si; TFT circuits; linear IC; low-temperature processes; opamps; operational amplifiers; poly-Si analogue circuits; polycrystalline Si; polysilicon; thin film transistors;
Journal_Title :
Circuits, Devices and Systems, IEE Proceedings -
DOI :
10.1049/ip-cds:19949950
