Physical interpretation of the noise reduction for the generation—Recombination current due to SRH centers in the space-charge layer

The expressions for the noise in the generation-recombination current due to SRH centers in the space-charge layer of junction devices have been recast in a simple form. For low forward bias the noise reduction (Γ²≈ 0.75) is shown to stem from the two-step recombination process, while the high-frequency reduction Γ²≳ 0.5 stems from the noncorrelation of electron and hole transport.