Effects of doping profile on the performance of BARITT devices

The effects of doping profile on the power output, efficiency, and operating frequency of BARITT devices are considered. An approximate analysis is presented which can be used as a guide for the design of such devices and shows the important parameters which affect the operation of the device. This is followed by a detailed computer simulation of various device structures and the inherent limitations of the approximate analysis are discussed. The computer simulations indicate that the Si and GaAs p⁺-n-i-p⁺and p⁺-n-p-p⁺structures are most promising with regard to power output and efficiency, respectively. Other results concerning high-frequency and low-voltage operation are also presented.