• DocumentCode
    1057707
  • Title

    DC thermal model of semiconductor device produces current filaments as stable current distributions

  • Author

    Olson, Hilding M.

  • Author_Institution
    Bell Laboratories, Reading, PA
  • Volume
    24
  • Issue
    9
  • fYear
    1977
  • fDate
    9/1/1977 12:00:00 AM
  • Firstpage
    1177
  • Lastpage
    1184
  • Abstract
    How current filaments arise in semiconductor devices can be studied with the aid of a simple two-dimensional thermal model. This dc model generates temperature and current distributions across the semiconductor chip. To use the model one must be able to prescribe the temperature dependence of the dc conductance in the chip from prior knowledge of the conduction mechanism. This model produces current filaments as stable current distributions. Moreover it demonstrates that current filaments will form in avalanche diodes at high power levels even if the chips are defect-free. The key to filament formation in a semiconductor device is an increase of the dc conductance with temperature at some operating point. In avalanche conduction, when the diode bulk leakage current increases faster than the avalanche current multiplication factor decreases with temperature, the avalanche conductance begins to rise. When this happens, a current filament forms raising the temperature locally to more than 1600°C, according to the model, and results in diode burnout. This mechanism is believed to be involved also in RF-induced burnout of avalanche diodes and in the burnout of other semiconductor devices.
  • Keywords
    Conductors; Current distribution; DC generators; Hysteresis; Leakage current; Semiconductor devices; Semiconductor diodes; Temperature dependence; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18902
  • Filename
    1479094