• DocumentCode
    1057727
  • Title

    Selective lift-off for preferential growth with molecular beam epitaxy

  • Author

    Cho, A.Y. ; DiLorenzo, J.V. ; Mahoney, G.E.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    24
  • Issue
    9
  • fYear
    1977
  • fDate
    9/1/1977 12:00:00 AM
  • Firstpage
    1186
  • Lastpage
    1187
  • Abstract
    Semiconducting material consisting of inlays of different doping or composition in selective areas may be grown by molecular beam epitaxy (MBE). The growth morphology showed that it is possible to fill an etched hole with MBE without the formation of voids resulting from facet growth as observed in other growth techniques. This regrowth process may have potential for applications to integrated microwave and optoelectric devices.
  • Keywords
    Crystallization; Epitaxial growth; Etching; FETs; Gallium arsenide; Hafnium; Microwave devices; Molecular beam epitaxial growth; Plasma temperature; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18904
  • Filename
    1479096
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1057727