Injection-Type GaInAsP–InP–Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate

Author

Okumura, Tadashi ; Maruyama, Takeo ; Yonezawa, Hidenori ; Nishiyama, Nobuhiko ; Arai, Shigehisa

Author_Institution

Quantum Nanoelec- tronics Res. Center, Tokyo Inst. of Technol., Tokyo

Volume

21

Issue

5

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

283

Lastpage

285

Abstract

An injection-type distributed-feedback laser, with wirelike active regions, directly bonded on a silicon-on-insulator substrate, was realized. A low threshold current I_th of 104 mA was obtained at a stripe width of 25 mum and a cavity length of 1 mm. A sidemode suppression ratio of 28 dB was obtained at 1.3 I_th.

Keywords

III-V semiconductors; bonding processes; distributed feedback lasers; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; laser cavity resonators; optical fabrication; semiconductor lasers; silicon; silicon-on-insulator; GaInAsP-InP-Si; Si-SiO₂; current 104 mA; direct bonding process; distributed-feedback laser; injection-type DFB laser; laser cavity length; sidemode suppression ratio; silicon-on-insulator substrate; size 1 mm; wirelike active regions; Direct wafer bonding; injection-type distributed-feedback (DFB) laser; photonic integrated circuit (PIC); silicon-on-insulator (SOI); wirelike active region;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2008.2010780

Filename

4738370