Demonstration of semipolar (11-22) InGaN/ GaN blue-green light emitting diode

A semipolar (11-22) (Ga, In)N/GaN blue-green light emitting diode directly grown on a 2 inch (11-22) GaN template on (10-10) m-plane sapphire by metal organic vapour phase epitaxy is demonstrated. The processed devices show uniform output power and an emission wavelength at ~490 nm across the entire wafer. No blue shifting of the peak emission could be observed by electroluminescence measurements, when the drive current was increased. On-wafer measurements yielded an average power output of 7 and 23 muW for drive currents of 20 and 80 mA, respectively.